Molecular Construction Limits
by Robert J. Bradbury
Abstract
A common mistake encountered in literature discussing the search for
extraterrestrial life is the perspective of assuming and applying human
characteristics and interests to alien species. Another mistake is
to limit oneself to to the assumption that aliens will only have available
technologies substantially similar to those we currently possess.
These mistakes may bias our conclusions enough to prevent us from understanding
signs of alien intelligence when we see it as well as misdirect our efforts
in searching for it. We should start with the laws on which our particular
universe operates and the limits they impose on us. Using these laws
and limits, we may be better able to construct an image of what alien intelligence
may be like and how we ourselves may evolve.
Some principles which we should consider:
-
The speed of light imposes a fundamental limit on communication and travel.
-
There is a finite amount of matter and energy.
-
The second law of thermodynamics limits the amount of work which can be
done.
-
The properties of the components of matter, e.g. electrons, protons and
neutrons at the micro level and elements and compounds at the macro level
impose contraints on the form and properties of objects which may be constructed.
The concept of working with objects constructed at an atomic level was
first explored by Feynman, in his now famous talk "There's
Plenty of Room at the Bottom", in 1959. The rules in this arena
were explored in great detail by Eric Drexler in "Nanosystems", in 1992.
It is becoming common for Nobel prizes
to be awarded for inventing machines which visualize and manipulate atoms,
e.g. microscopes
(1986), ion
traps (1989) and atomic
traps (1997).
We can analyze historic trends in microelectronics, from the invention
of the transistor, through the development of the integrated circut, to
modern microprocessors and make some projections regarding future trends.
These projections may be combined with our current understanding of biology
and compution to yield some estimates on computational limits.
It is important to remember that the pessimists have been wrong.
In 1983 paper by L. F. Thompson and M. J. Bowden titled "The Lithographic
Process: The Physics", they stated:
"After consideration of all factors which limit resolution
such as exposure hardware, resist systems, registration, alignment, and
linewidth control, there is a general consensus that the useful resolution
limit of photolithography may lie somewhere between 0.4 and 0.8 mm
and depends on such factors as the implementation of short wavelength UV
and the ability to accurately place images from a projection tool onto
a silicon wafer."
These researchers worked at Bell Laboratories
so we should consider this opinion well informed. For many years
Bell Laboratories has been viewed as favoring electron beam lithography
over photolithography. One is left to wonder if the purveyors of
alternate technologies are those who tend to be the most pessimistic in
their predictions. Since the prediction clearly has been shown to
be false with production lithography at 0.25 mm,
soon to be 0.18 mm and research showing that
optical lithography can be extended to at least 0.08 mm
one is left with some doubt about the accuracy of pessimistic predictions.
Modern microelectronics is based on the ability to create patterns on
the surface of semiconductor (Ge, Si, GaAs) materials. These patterns
are "drawn" using optical lithography whose trend is to increasingly smaller
pattern dimensions. From visible light (10 um scale) we have progressed
into UV (.25 um scale) and will reach the .13 um scale by 2004. EUVL
methods recently developed at Sandia National
Laboratories may take us even further to .01 um (100 nm).
Table 1. Lithography
Trends
| Year |
Lithography Method |
Source |
Feature
Limit |
Comments |
| |
|
|
microns
|
|
| 1963 |
Photolithography
|
|
20
|
|
| 1975 |
"
|
|
8.0
|
|
| 1977 |
"
|
|
5.5
|
|
| 1979 |
"
|
436 nm UV?
|
3.5
|
|
| 1982 |
"
|
350 nm UV
|
2.25
|
|
| |
"
|
|
|
|
| 1983 |
"
|
|
2.0
|
|
| |
"
|
|
1.0
|
|
| |
"
|
|
0.8
|
|
| 1993 |
"
|
|
0.5
|
Production |
| 1995 |
"
|
365 nm Mercury lamp
|
0.35
|
Production |
| 1998 |
"
|
KrF 248nm laser
|
0.13
|
Production |
| 1999 |
"
|
KrF 248nm laser
|
0.10
|
Production |
| 1998 |
"
|
ArF 193nm laser
|
0.08
|
Uses phase-shift
photomasks |
| ~2003 |
"
|
ArF 193nm laser
|
0.13-0.10
|
Production |
| ~2007 |
"
|
F2 157nm laser with EPL
|
0.10-0.07
|
Production |
| ~2013 |
"
|
Ar 126nm excimer
|
0.05 (0.03?)
|
Experimental (see below) |
| 2000+ |
EUV
|
13nm Xenon Gas laser
|
~ 0.08?
|
Sandia EUVL
Project |
| 2000+ |
Ion Projection
|
He+ ions
|
0.04
|
Ion Projection
Lithography |
| 2000+ |
X-ray
|
0.5-0.04 nm X-rays
|
0.05
|
|
| 2000+ |
E-beam
|
|
0.005
|
SCALPEL system goes to 0.08 mm |
Beyond these dimensions, there are at least three competing technologies,
X-ray lithograpy, supported by IBM; e-beam lithography, supported by Lucent
and nano-imprint lithography, developed by George Whitesides at Harvard
and being explored in other laboratories now. These technologies
will allow the creation of patterns down to the .01 mm
(100 nm) scale. Currently it is unclear which of these technologies
will be successful. Economic theory would argue that competition
will drive down their respective costs and evolutionary theory would argue
that each technology may find a successful niche. Below these dimensions,
atomic force microscopes and variants thereof will allow us to manipulate
individual atoms (~.2 nm). It is worth noting that all living things,
including humans, are testimony to the fact that macro-scale objects can
be constructed out of small molecules and manipulations at the atomic scale.
Many people wonder if the historic trends in miniaturization can continue.
Economically it is difficult to see how they cannot. Few would argue of
the benefits to society of:
-
More efficient and intelligent machinery (via microcontrollers)
-
Throw-away micro-information and micro-processing devices (smart cards)
-
Migration of information storage, searching, retreival, organization and
presentation from ill-suited human minds to more effiient devices (personal
computers and personal digital assistants)
-
Inexpensive and rapid communication to any point on the globe (cell phones
and satellite networks)
-
Massive amounts of on-line, shared information (WWW and connected databases)
Woe be to the company and its executives who allow themselves to stumble
in these races. Short will be the tenures of government officials
who allow their countries to fall behind in these areas. So while
naysayers would argue that we must "hit-the-wall" soon, they in fact create
the climate which negates their predictions. Recognition and awards
in our society are based on doing things which nobody else has done or
succeeding where others have failed. By defining the problem, the
naysayers simply create another opportunity for creative individuals to
achieve success. How quickly those successes are achieved depends
in large part on the size of the society and the fraction of its resources
which can be devoted to investigating a problem. As human population
is still increasing and societies generally continue to grow wealthier,
we should expect that increasing amounts of research will be done and the
rate of problem solving will increase rather than decrease.
If current trends continue, we will reach the limits of 2-dimensional
patterning of atomic scale structures between 2050 and 2060. That
means for a society our historic size, consisting of individuals with our
innate intellectual capacity, it takes less than 150 years from the discovery
of the electron to reach the limits of 2-D atomic construction. The
time scale may be shorter if the planet is larger, has more land mass,
receives more energy from its sun or in some other way has a greater investigative
carrying capacity. The time scale may be longer if the investigative
carrying capacity is smaller. In either case is is likely that the
time scale will be very brief from an astronomical perspective.
Once the 2-D limit is reached, the only way to continue progress is
in the 3rd dimension. We already build devices in 3 dimensions.
Current microelectronic devices may have dozens of steps of adding or removing
material from the surface of the device. Our most complex devices
may have 6 layers of metal to connect the transistors. Molecular
beam epitaxy (MBE) is used to build devices which may have multiple layers
of varying atomic thickness. Once the 2-D limit is reached the pressure
will increase to operate in the 3rd dimension if it has not previously
been achieved due to the recongized benefits nanoassembly would provide.
So the evolution from not knowing the elements which compose matter to
being able to build complex 3-D structures should take at most several
hundred years for societies similar to ours.
So, we may assume that if a species evolves which begins to comprehend
matter, the laws which govern its behavior and they have an interest in
exploring and controlling it, there is rapid progress from a lack of knowledge
to the ability to manipulate things at the limits imposed by nature.
References
-
Solid State Technology: Trends
Shaping the next 10 years
-
FutureFab
-
Sandia Laboratories
EUVL Project
-
Industry,
Labs Seek New Tricks to Make Chips
-
First Working Device Made
With Extreme Ultraviolet Lithography
-
EUVL
CRDA Story
-
Cymer ELS-6000
248nm ArF Laser for .18 mm lithography
-
Canon FPA-5000ES2
step-and-scan system with 248nm ArF laser for 0.25 and 0.18 mm
lithography
-
Canon
IDEAL method can use 193nm to produce 0.08 um (80 nm) lines (1999/02/12)
-
RIT prepares
for 157nm F2 lithography
-
Eximer leasers from EXCI
@ D.V. Efremov Institute
-
The Laser
Adventure: Eximer
Lasers and Historic
Development of Eximer Lasers
-
Ion Projection
Lithography
-
Future Trends in Microelectronics: Reflections on the Road to Nanotechnology,
S. Luryi, J. Xu and A Zaslavsky (eds.), Proceedings
of the NATO Advanced Research Workshop on Future Trends in Microelectronics:
Reflections ont he Road to Nanotechnology July 17-21, 1995, Ile de Bendor,
France, Kluwer Academic, Proc (1995), ISBN: 0792341694
-
"Mass Production of Nanometer Devices", Alec, N. Broers, pp 23-34.
-
Bell Labs' SCALPEL
electron lithography creates semiconductor lines 0.08 microns wide
(1996/07/08)
-
SCALPEL
Technical Information, SCALPEL
project
-
Holographic Lithography Systems
-
ASM Lithography
News
-
SPIE Microlithography March 14-19, 1999
Microlithography
Special Plenary Session
-
European Semiconductor, March,
1999:
Speakers from Nikon, ASML, Lucent, Sematech and IMEC discussed extending
optical lithography resolution to 50 nm using 126 nm lasers at Olin's annual
seminar in Antwerp.
-
On September 21, 2000, Eureka
Alert pointed out (here)
that clever techniques for manipulating photons might allow them to be
used for lithography down to l/4 instead of
the more classical l/2 Rayleigh diffraction
limit. Slashdot has a discussion here.
See Boto, A. N., et. al., "Quantum Interferometric Optical Lithography:
Exploiting Entanglement to Beat the Diffraction Limit", Physical
Review Letters 85(13):2733-2736
(25 Sept. 2000).
When combined with a 157nm F2 laser, that would allow optical
lithography to reach ~40nm (0.04mm). If
the 126nm Ar lasers become available, this could be pushed to ~32nm (0.02mm)
That would seem to suggest that optical lithography may last until ~2013-2015.
(See my SIA Roadmap)
-
P. Seidel, J. Canning, S. Mackay, W. Trybula, "Next
Generation Advanced Lithography", Sematech, Austin, TX.
-
Lithographers
Narrow Options to EUV and EPL for Commercialization (from SEMATECH,
11 Oct. 2000);
Consensus:
-
130 nm: 248 nm optical and 193 nm optical
-
100 nm: 193 nm optical and 157 nm optical
-
70 nm: 157 nm optical, EPL (electron-projection lithography) and EUV
-
50 nm: EUV and EPL
-
35 nm: EUV
-
Challenges
of Next-Generation Lithography, John Canning, International SEMATECH
(Sept. 2000).
-
Hara, Y., "Low-energy
e-beam system for next-generation lithography", EE Times (14
Dec 2000). { E-beam system for 70 and 50 nm. }
See Also
Created: sometime in 1998
Last Modified: December 19, 2001
HTML Editor: Robert
J. Bradbury